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The basic principle of LED epitaxial wafer growth is to control the transport of gaseous substances to the surface of the substrate on a substrate substrate (mainly sapphire and SiC, Si) heated to a suitable temperature to grow a specific single crystal film.At present, the LED epitaxial wafer growth technology mainly adopts an organometallic chemical vapor deposition method.LED epitaxial wafer material is the cornerstone of the development of semiconductor lighting industry technology.Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate material determines the development route of semiconductor lighting technology.



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